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The paper from the group of the Electronics Laboratory of the Electrical and Computer Engineering School, under Assoc. Professor Matthias Bucher,

'Modeling of High Total Ionizing Dose (TID) Effects for Enclosed Layout Transistors in 65 nm Bulk CMOS',
Aristeidis Nikolaou ¹, Matthias Bucher ¹ Nikolaos Makris¹, Alexia Papadopoulou ¹, Loukas Chevas¹, Giulio Borghello^2,4, Henri D. Koch^3,4, Federico Faccio ⁴

was awarded the 'Best Paper Award CAS 2018', in Session 'Modelling'. The paper was presented by the Doctoral student of ECE, Aris Nikolaou, at the 41st IEEE International Semiconductor Conference (CAS 2018), Sinaia, Romania, Oct. 10-12, 2018.

This work has been co-authored by researchers at CERN, Geneva, Switzerland, with whom the Electronics Laboratory and the group of Prof. Bucher has a research cooperation.

¹ School of Electrical and Computer Engineering, Technical University of Crete, Chania, Greece
² DPIA, Università degli Studi di Udine, Udine, Italy
³ SEMi, Université de Mons, Mons, Belgium
⁴ EP Dept., CERN, Geneva, Switzerland